Optical properties of Ga_0.82In_0.18N <i>p</i>-<i>n</i> homojunction blue-green light-emitting-diode grown by radio-frequency plasma-assisted molecular beam epitaxy

• Onuma Takeyoshi

  Department of Liberal Arts, Tokyo National College of Technology Department of Information and Communications Engineering, Kogakuin University

• Narutani Kento

  Department of Information and Communications Engineering, Kogakuin University

• Fujioka Shuhei

  Department of Information and Communications Engineering, Kogakuin University

• Yamaguchi Tomohiro

  Department of Information and Communications Engineering, Kogakuin University

• Wang Ke

  Department of Photonics, Ritsumeikan University

• Araki Tsutomu

  Department of Photonics, Ritsumeikan University

• Nanishi Yasushi

  Department of Photonics, Ritsumeikan University

• Sang Liwen

  Wide Bandgap Material Group, National Institute for Materials Science (NIMS)

• Sumiya Masatomo

  Wide Bandgap Material Group, National Institute for Materials Science (NIMS)

• Honda Tohru

  Department of Information and Communications Engineering, Kogakuin University

Abstract

Optical properties of Ga_0.82In_0.18N p-n homojunction light-emitting-diode are investigated by the photovoltaic, photoluminescence-excitation, electroluminescence (EL), and photoluminescence (PL) measurements. Although the X-ray diffraction measurements indicate a uniform InN molar fraction x in the sequentially grown n- and p-type Ga_0.82In_0.18N layers, the EL and PL exhibited different peak energies at room temperature. The difference is explained by the emission models in the n- and p-type of Ga_0.82In_0.18N layers. The results demonstrate a potential use of Ga_1-xIn_xN p-n homojunction for further development of functional device structures.

Journal

• Transactions of the Materials Research Society of Japan

  Transactions of the Materials Research Society of Japan 40 (2), 149-152, 2015

  The Materials Research Society of Japan

Keywords

• GaInN
• MBE
• photovoltaic
• electroluminescence
• photoluminescence

Details

• CRID: 1390282680490557952
• NII Article ID: 130005089534
• DOI: 10.14723/tmrsj.40.149
• ISSN: 21881650
• ISSN: 13823469
• Text Lang: ja
• Data Source:
  • JaLC
  • Crossref
  • CiNii Articles
  • KAKEN
• Abstract License Flag: Disallowed