Study of Adhesion Properties of Cu on Photosensitive Insulation Film for Next Generation Packaging

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As the demand for advanced packaging is growing, the organic multi-chip package, a combination of organic interposer and organic substrate have attracted increasing attention in realizing further advancements of electronic devices with higher densities and more functions. The semi-additive process (SAP) method has been developed for Cu wiring and blind via in packaging substrate. To make the fine Cu wiring below 5 μm, the sputtering Ti/Cu has been studied. While opening a blind via below 50 μm in diameter, the laser method has problem. Photosensitive organic materials having great mechanical strength and heat resistance were mainly used as protection and insulation layers of very large scale integrated circuit, because they simplify the via formation processing and did not generate the residues during process. Specifically, we have newly developed the film type photosensitive insulation materials. Our photosensitive insulation films (PIFs) showed high resolution, high adhesion strength with Ti/Cu seed layer and suitability to SAP with the sputtering process.

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