Low Density Growth of Graphene by Air Introduction in Atmospheric Pressure Chemical Vapor Deposition
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- Suzuki Seiya
- Graduate School of Engineering, Toyota Technological Institute
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- Kiyosumi Kana
- Graduate School of Engineering, Toyota Technological Institute
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- Nagamori Takashi
- Graduate School of Engineering, Toyota Technological Institute
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- Tanaka Kei
- Daido Bunseki Research, Inc.
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- Yoshimura Masamichi
- Graduate School of Engineering, Toyota Technological Institute
抄録
Chemical vapor deposition (CVD) is a promising method to produce large-size single-crystal graphene, and further increase in domain size is desirable for electro/optic applications. Here we studied the effect of low amount of air introduction by intentional leak on graphene growth in atmospheric pressure CVD. The air introduction at the heating process resulted in roughening of Cu surface induced by oxygen, while air introduction at the annealing under H2 ambient drastically decreased graphene density due to reduction of active sites for graphene nucleation both by surface oxidation and enlargement of Cu domain. Although air introduction only at the growth stage was ineffective for graphene nucleation, air introduction for both annealing and growth provided great enhancement of domain growth without increasing the density of graphene, which is an optimized condition to obtain a large single-crystal. This controlled introduction of air in atmospheric pressure CVD provided ∼ 2.5 mm hexagonal single layer graphene with high quality. [DOI: 10.1380/ejssnt.2015.404]
収録刊行物
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- e-Journal of Surface Science and Nanotechnology
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e-Journal of Surface Science and Nanotechnology 13 (0), 404-409, 2015
公益社団法人 日本表面真空学会
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詳細情報 詳細情報について
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- CRID
- 1390001205187226240
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- NII論文ID
- 130005094205
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- ISSN
- 13480391
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- 本文言語コード
- en
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- データソース種別
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- JaLC
- Crossref
- CiNii Articles
- KAKEN
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- 抄録ライセンスフラグ
- 使用不可