Effect of Ion Irradiation for Ni Films prepared on a Flexible Substrate Material Using Magnetron Sputtering with Multipolar Magnetic Plasma Confinement Assisted by Inductively Coupled Plasma

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  • MIYASHITA Sho
    Graduate School of Science and Technology, Hiroshima Institute of Technology
  • TOYOTA Hiroshi
    Department of Electronics and Computer Engineering, Hiroshima Institute of Technology

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  • 誘導結合プラズマ支援型多重磁極型マグネトロンスパッタ法により柔軟性素材上に作製した Ni 薄膜に及ぼすイオン照射の効果
  • ユウドウ ケツゴウ プラズマ シエンガタ タジュウ ジキョクガタ マグネトロンスパッタホウ ニ ヨリ ジュウナンセイ ソザイ ジョウ ニ サクセイ シタ Ni ハクマク ニ オヨボス イオン ショウシャ ノ コウカ

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Abstract

  We fabricated Ni films on a flexible substrate material using magnetron sputtering with multipolar magnetic plasma confinement assisted by inductively coupled plasma.<br>   For each RF Power PRF value, argon ion emission intensity IArII near the HF coil and substrate current Is increased for applying substrate DC bias voltage VS. We observed that the effect of ion irradiation was enhanced by applying VS. For VS=−40 V and PRF=35 W, the effect of ion irradiation was maximum in deposition conditions. For increasing the effect of ion irradiation, the grain size and surface of fabricated Ni films became large and smooth. In addition, orientation of Ni(111) enhanced. For VS=−40 V and PRF=35 W a film resistivity ρ of 8.51×10−6 Ωcm was observed, which is close to the Ni bulk value of 6.84×10−6 Ωcm. From these results, we determined that the structure of the fabricated Ni films on the flexible substrate material was affected by the effect of ion irradiation.<br>

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