Strain Field Around Lomer Sessile Dislocations in Silicon Measured using Geometric Phase Analysis

• Adhika Damar Rastri

  Department of Materials Science and Engineering, Kyushu University

• Tanaka Masaki

  Department of Materials Science and Engineering, Kyushu University

• Yamamoto Tomokazu

  Department of Applied Quantum Physics and Nuclear Engineering, Kyushu University

• Higashida Kenji

  Department of Materials Science and Engineering, Kyushu University

Abstract

Strain fields around dislocation pairs were measured using geometrical phase analysis of high-resolution TEM images. Single crystalline (011) silicon wafers were employed. The wafers were deformed using three-point bending at 1123K in order to introduce dislocations. The observed dislocations were found to be Lomer sessile dislocations. The strain fields around the dislocations experimentally measured were in good agreement with those calculated from the elastic theory. Experimental results showed that the strain field of two dislocations can be regarded as a single dislocation when their distance is less than 6b.

Journal

• Transactions of the Materials Research Society of Japan

  Transactions of the Materials Research Society of Japan 40 (3), 227-233, 2015

  The Materials Research Society of Japan

Keywords

• HRTEM
• brittle-to-ductile transition
• dislocation shielding effect
• fracture
• geometric phase analysis

Details

• CRID: 1390282680488572928
• NII Article ID: 130005096531
• DOI: 10.14723/tmrsj.40.227
• ISSN: 21881650
• ISSN: 13823469
• Web Site: https://www.jstage.jst.go.jp/article/tmrsj/40/3/40_227/_pdf
• Text Lang: en
• Data Source:
  • JaLC
  • Crossref
  • CiNii Articles
  • KAKEN
• Abstract License Flag: Disallowed