Structural Evaluation of β-AlN Films Grown on Sapphire (0001) Substrates

• Yoshida Tomohiro

  Dept. Appl. Sci. Elect. & Mat., Kyushu Univ. Dept. Elect. & Elect. Eng., Kurume Nat. Coll. Tech.

• Ueda Yūtaro

  Dept. Appl. Sci. Elect. & Mat., Kyushu Univ.

• Daio Takeshi

  Res. Lab. for High Voltage Electron Microscopy, Kyushu Univ.

• Tominaga Aki

  Dept. Appl. Sci. Elect. & Mat., Kyushu Univ. Res. Center for Synchrotron Light Appl., Kyushu Univ.

• Okajima Toshihiro

  Saga Light Source

• Yoshitake Tsuyoshi

  Dept. Appl. Sci. Elect. & Mat., Kyushu Univ. Res. Center for Synchrotron Light Appl., Kyushu Univ.

抄録

β-AlN thin films with different thickness were grown on sapphire(0001) substrates with a smooth surface in a nitrogen atmosphere by pulsed laser deposition using a sintered AlN target, and their films were evaluated by X-ray diffraction and transmission electron microscopy. Zincblend-type β-AlN with a lattice constant of 7.89 Å was epitaxially grown on sapphire(0001) near the interface with the substrate. The electron diffraction patterns of its area along the close-packed planes exhibited streaking spots caused by dislocation defects. On the other hand, with increasing film thickness, the upper area of the AlN thin films became polycrystalline, and simultaneously the streaking disappeared there. Dislocation defects near the interface might be due to a large lattice mismatch or a shift in the close-patching sequence, and they disappears in the polycrystalline area.

収録刊行物

• Transactions of the Materials Research Society of Japan

  Transactions of the Materials Research Society of Japan 40 (3), 191-194, 2015

  一般社団法人 日本MRS

キーワード

• cubic AlN
• β-AlN
• thin films
• heteroepitaxial growth

詳細情報

• CRID: 1390001205511878784
• NII論文ID: 130005096538
• DOI: 10.14723/tmrsj.40.191
• ISSN: 21881650
• ISSN: 13823469
• Web Site: https://www.jstage.jst.go.jp/article/tmrsj/40/3/40_191/_pdf
• 本文言語コード: en
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