Development of Transmission Grating for EUV Interference Lithography of 1X nm HP

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  • Fukui Tsubasa
    Laboratory of Advanced Science and Technology for Industry, University of Hyogo
  • Tanino Hirohito
    Laboratory of Advanced Science and Technology for Industry, University of Hyogo
  • Fukuda Yuki
    Laboratory of Advanced Science and Technology for Industry, University of Hyogo
  • Kuki Masaki
    Laboratory of Advanced Science and Technology for Industry, University of Hyogo
  • Watanabe Takeo
    Laboratory of Advanced Science and Technology for Industry, University of Hyogo
  • Kinoshita Hiroo
    Laboratory of Advanced Science and Technology for Industry, University of Hyogo
  • Harada Tetsuo
    Laboratory of Advanced Science and Technology for Industry, University of Hyogo

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Abstract

The advanced feature size patterning process of semiconductor conductor devices was being charged with the important role with development of an information-technology oriented society. Extreme ultraviolet lithography (EUVL) is expected as a leading candidate of the next generation lithography for semiconductor electronic devices. The development of EUV resist which has high resolution, high sensitivity, low LWR, and low out gassing is a second critical issue of the EUVL. Development of the two-beam interference exposure tool using the EUV light has been upgraded for the critical dimension of 10-nm-order in EUV resist patterining process. This tool was installed at the 10.8-nm-long undulator beamline BL09B of NewSUBARU synchrotron radiation facility. Using this EUV interference lithographic method, 15 nm hp resist pattern had been replicated on a silicon wafer. The transmission grating fabrication is the most significant key technology in the EUV interference lithography. The advanced fabrication process is applied for the transmission-grating fabrication for the EUV resist patterning beyond the feature size of 15 nm, such as 12.5 and 10 nm.

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