[Paper] A Low Noise CMOS Image Sensor with Pixel Optimization and Noise Robust Column-parallel Readout Circuits for Low-light Levels

• Seo Min-Woong

  Research Institute of Electronics, Shizuoka University

• Yasutomi Keita

  Research Institute of Electronics, Shizuoka University

• Kagawa Keiichiro

  Research Institute of Electronics, Shizuoka University

• Kawahito Shoji

  Research Institute of Electronics, Shizuoka University

抄録

A low noise high sensitivity CMOS image sensor (CIS) is developed for low-light levels. The prototype sensor contains the optimized 1-Mpixel with the noise robust column-parallel readout circuits. The measured maximum quantum efficiency is approximately 60% at 660nm, and the long-wavelength sensitivity is also enhanced by a large sensing area and an optimized process. In addition, a low dark current of 0.96pA/cm² at 292 K, a low temporal random noise in a readout circuitry of 1.17e^-_rms, and a high pixel conversion gain of 124 μV/e^- are achieved. The implemented CMOS imager using 0.11 μm CIS technology with a pinned photodiode has a very high sensitivity of 87V/lx·sec that is suitable for the scientific applications such as medical imaging, bioimaging, surveillance cameras, and so on.

収録刊行物

• 映像情報メディア学会英語論文誌

  映像情報メディア学会英語論文誌 3 (4), 258-262, 2015

  一般社団法人 映像情報メディア学会

キーワード

• CMOS image sensor
• low noise
• high sensitivity
• folding-integration/cyclic analog-to-digital converter (ADC)

詳細情報

• CRID: 1390001205422789376
• NII論文ID: 130005102463
• DOI: 10.3169/mta.3.258
• ISSN: 21867364
• Web Site: https://www.jstage.jst.go.jp/article/mta/3/4/3_258/_pdf
• 本文言語コード: en
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