Copper Ion-containing Ionic Liquids Provide Improved Endurance and Switching Voltage Distributions of Conducting-bridge Random Access Memory

• Akinori Harada

  Department of Chemistry and Biotechnology, Graduate School of Engineering, Tottori University

• Hiroki Yamaoka

  Department of Chemistry and Biotechnology, Graduate School of Engineering, Tottori University

• Kouhei Watanabe

  Department of Information and Electronics, Graduate School of Engineering, Tottori University

• Kentaro Kinoshita

  Department of Information and Electronics, Graduate School of Engineering, Tottori University

• Satoru Kishida

  Department of Information and Electronics, Graduate School of Engineering, Tottori University

• Yukinobu Fukaya

  Center for Research on Green Sustainable Chemistry, Graduate School of Engineering, Tottori University

• Toshiki Nokami

  Department of Chemistry and Biotechnology, Graduate School of Engineering, Tottori University

• Toshiyuki Itoh

  Department of Chemistry and Biotechnology, Graduate School of Engineering, Tottori University

抄録

Remarkable improvement of cycling endurance and working voltage variance has been achieved by the addition of a trace amount of a [bmim][Tf2N] solution containing Cu(Tf2N)2 to the HfO2 film layer of a CB-RAM with a Cu/HfO2/Pt structure.

収録刊行物

• Chemistry Letters

  Chemistry Letters 44 (11), 1578-1580, 2015-09-12

  Oxford University Press (OUP)

キーワード

• General Chemistry

詳細情報

• CRID: 1360565169059151360
• NII論文ID: 130005108105
• DOI: 10.1246/cl.150773
• ISSN: 13480715
• ISSN: 03667022
• Web Site: https://academic.oup.com/chemlett/article-pdf/44/11/1578/55639404/cl.150773.pdf
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