High Performance Organic Field-Effect Transistors with High-k Insulator Deposited Directly onto the Organic Semiconductor

• ONO Shimpei

  Central Research Institute of Electric Power Industry

Bibliographic Information

Other Title

• 原子層堆積法を用いて製膜した極薄絶縁層を用いた有機電界効果トランジスタ
• ゲンシソウ タイセキホウ オ モチイテ セイマク シタ ゴクウス ゼツエンソウ オ モチイタ ユウキ デンカイ コウカ トランジスタ

Abstract

  We have produced stable organic field-effect transistors (OFETs) with an ultra-thin high-k gate insulator deposited directly on top of organic semiconductor by atomic layer deposition (ALD). We show that it is possible to fabricate devices with negligibly small threshold voltage and very low gate-bias-stress instability without sacrificing carrier mobility. These results indicate that the interface between organic semiconductor and gate insulator made by ALD is suitable to realize high-quality OFETs, operating at small gate voltage. In addition, the dielectric layer acts as a perfect passivation layer protecting organic semiconductors from degradation.<br>

Journal

• Journal of the Vacuum Society of Japan

  Journal of the Vacuum Society of Japan 58 (3), 104-108, 2015

  The Vacuum Society of Japan

Keywords

• Spectroscopy
• Surfaces and Interfaces
• Instrumentation
• General Materials Science

Details

• CRID: 1390282680272808832
• NII Article ID: 130005130500
• NII Book ID: AA12298652
• DOI: 10.3131/jvsj2.58.104
• ISSN: 18824749
• ISSN: 18822398
• NDL BIB ID: 026236427
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I026236427
• Text Lang: ja
• Data Source:
  • JaLC
  • NDL
  • Crossref
  • CiNii Articles
  • KAKEN
• Abstract License Flag: Disallowed