Si中Cu,Niの熱的振る舞い:フォトルミネッセンス/DLTS測定  [in Japanese] Thermal Behavior of Cu and Ni in Silicon Measured by Photoluminescence and Deep-Level Transient Spectroscopy  [in Japanese]

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Author(s)

Abstract

The influence of diffusion temperature on the formation of one type of Cu center denoted as Cu<sub>DLB</sub> center, the relationship between the concentrations of the Cu<sub>DLB</sub> center after the diffusion of Cu and those of contaminated Cu on sample surfaces, and the transformation of the Cu<sub>DLB</sub> center to another type of Cu center denoted as the Cu<sub>DLA</sub> center by annealing were investigated by photoluminescence and deep-level transient spectroscopy (DLTS) measurements. It was found that the Cu<sub>DLB</sub> center is composed of one core Cu atom and weakly bonded three interstitial Cu atoms around the core and that the Cu<sub>DLA</sub> center is the core of the Cu<sub>DLB</sub> center. For Ni, the depth profiles of the substitutional Ni (Ni center) in silicon diffused with various concentrations of the element were measured by DLTS, and were found to be controlled by the temperature-dependent outdiffusion of Ni.

Journal

  • Hyomen Kagaku

    Hyomen Kagaku 37(3), 128-133, 2016

    The Surface Science Society of Japan

Codes

  • NII Article ID (NAID)
    130005138639
  • NII NACSIS-CAT ID (NCID)
    AN00334149
  • Text Lang
    JPN
  • ISSN
    0388-5321
  • NDL Article ID
    027198515
  • NDL Call No.
    Z15-379
  • Data Source
    NDL  J-STAGE 
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