Atomic-resolution analysis for the effects of heat treatment temperatures on the growth of chemically-ordered regions in Pb(Mg<sub>1/3</sub>Nb<sub>2/3</sub>)O<sub>3</sub> thin films
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- FAN Cangyu
- Department of Materials Science, Tohoku University
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- KIGUCHI Takanori
- Institute for Materials Research, Tohoku University
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- AKAMA Akihiro
- Institute for Materials Research, Tohoku University
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- KONNO Toyohiko J.
- Institute for Materials Research, Tohoku University
抄録
This paper describes growth behaviors of chemically-ordered regions (CORs) in Pb(Mg1/3Nb2/3)O3 (PMN) epitaxial thin films. The films are crystalized at 650°C, which corresponds to about half of the crystallization temperature of bulk crystals. We obtained PMN epitaxial thin films with high crystallinity by using a metallo-organic decomposition (MOD) process. According to our atomic-resolution analysis using HAADF-STEM images, it is shown that CORs in PMN epitaxial thin films grow by nucleation of small clusters whose sizes are 1 to 2 nm on each side of habit plane, {100} and {110}. In addition, post-annealing process at 700 or 800°C causes growth of CORs. The growth mechanism of CORs is not by the expansion of each cluster but by the nucleation of new clusters. After post-annealing at high temperatures, CORs join with each other on their habit plane and made a network along ⟨100⟩, ⟨110⟩ and ⟨112⟩ direction.
収録刊行物
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- Journal of the Ceramic Society of Japan
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Journal of the Ceramic Society of Japan 124 (6), 697-701, 2016
公益社団法人 日本セラミックス協会
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詳細情報 詳細情報について
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- CRID
- 1390282680262023808
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- NII論文ID
- 130005155640
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- ISSN
- 13486535
- 18820743
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- 本文言語コード
- ja
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- データソース種別
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- JaLC
- Crossref
- CiNii Articles
- KAKEN
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- 抄録ライセンスフラグ
- 使用不可