書誌事項
- タイトル別名
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- Indium Implantation onto Zeolite for Development of Novel Catalysts with a Ion Beam System
- シンキ ハンノウ ショクバイ カイハツ オ メザシタ ゼオライト エ ノ インジウムタンジ ノ ココロミ
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The implantation of indium (In) onto zeolite was carried out with a low-energy mass-selected ion beam system for the possible development of novel catalysts. In ions were generated by sputtering an In2O3 target with Ar ions in a modified Freeman-type ion source. Ions generated in the ion source were extracted under high voltages to form mono-energetic 115In ion beams with the peak energy of around 500 eV. Then, the zeolite substrates were irradiated by the In ion beams. Both X-ray fluorescence and X-ray diffraction analyses revealed that the implantation of In on the zeolite surface was successful and dependent on the ion doses of In. We failed to detect the catalytic effects in the In implanted zeolite as far as at the conditions employed in the present study. However, a further study is still necessary to determine the catalytic effect of the In implanted zeolite.
収録刊行物
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- Journal of Smart Processing
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Journal of Smart Processing 4 (5), 228-233, 2015-09-20
一般社団法人 スマートプロセス学会 (旧高温学会)
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詳細情報 詳細情報について
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- CRID
- 1390001205416933120
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- NII論文ID
- 130005263569
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- NII書誌ID
- AA12553487
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- ISSN
- 21871337
- 2186702X
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- NDL書誌ID
- 026779537
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- 本文言語コード
- ja
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- データソース種別
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- JaLC
- NDL
- Crossref
- CiNii Articles
- KAKEN
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- 抄録ライセンスフラグ
- 使用不可