DC Biasing Effects on Properties of Carbon Nanowalls by Microwave Surface-Wave Plasma Chemical Vapor Deposition and Towards Transparent Electrode

• Ichimura Susumu

  Graduate School of Natural Science and Technology, Okayama University Institute for General Research of Science, Chubu University

• Hayashi Yasuhiko

  Graduate School of Natural Science and Technology, Okayama University

• Umeno Masayoshi

  Institute for General Research of Science, Chubu University

抄録

We synthesized carbon nanowalls on a Si substrate by microwave surface-wave plasma chemical vapor deposition. The Raman scattering I_D/I_G ratio was changed by altering the DC bias applied to the growth substrate and the decrease in I_D/I_G with increasing DC bias appears to arise from the growing length of the carbon nanowalls. The ultrasonically separated carbon nanowalls in ethanol exhibited strong 2D-peak intensity and significant graphitization. A graphite layer of approximately 10 nm grew parallel to the substrate initially, and the carbon nanowalls grew on top of that. When the nanowalls were dispersed in ethanol and spin-coated onto PET, they exhibited a transmittance of 81% and a sheet resistance of 52 kΩ/□ without reduction treatment used in the graphene oxide.

収録刊行物

• Transactions of the Materials Research Society of Japan

  Transactions of the Materials Research Society of Japan 41 (3), 229-233, 2016

  一般社団法人 日本MRS

キーワード

• Carbon Nanowalls
• CVD
• Ultrasonic
• Raman
• TEM

詳細情報

• CRID: 1390282680490898944
• NII論文ID: 130005263642
• DOI: 10.14723/tmrsj.41.229
• ISSN: 21881650
• ISSN: 13823469
• Web Site: https://www.jstage.jst.go.jp/article/tmrsj/41/3/41_229/_pdf
• 本文言語コード: en
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