Electrochemical-Etching Approach to Achieving Ultrathin FeSe Films

• SHIOGAI Junichi

  Institute for Materials Research, Tohoku University

• NOJIMA Tsutomu

  Institute for Materials Research, Tohoku University

• TSUKAZAKI Atsushi

  Institute for Materials Research, Tohoku University

Bibliographic Information

Other Title

• 電気化学エッチングによるセレン化鉄膜厚制御の実現
• デンキ カガク エッチング ニ ヨル セレンカテツ マクアツ セイギョ ノ ジツゲン

Abstract

Electric double layer transistor (EDLT) has attracted attentions over the decade as a useful tool to induce and control fascinating many physical properties at two dimensional (2D) materials surface based on its giant capacitance. This paper highlights another aspect of EDLT: electrochemical reaction as a method to achieve ultrathin films. Precise tuning of reactivity of electrochemical etching between ionic liquid and solid surface makes it possible to peel off 2D materials layer-by-layer. This technique was applied to an iron-based superconductor FeSe in EDLT towards the observation of high temperature superconductivity in ultra-thin film form.

Journal

• Hyomen Kagaku

  Hyomen Kagaku 37 (11), 541-546, 2016

  The Surface Science Society of Japan

Keywords

• iron chalcogenide
• electric double layer transistor
• electrochemical
• superconductivity

Details

• CRID: 1390001206459242112
• NII Article ID: 130005284288
• NII Book ID: AN00334149
• DOI: 10.1380/jsssj.37.541
• ISSN: 18814743
• ISSN: 03885321
• NDL BIB ID: 027768573
• Web Site: http://id.ndl.go.jp/bib/027768573
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I027768573
• Web Site: https://www.jstage.jst.go.jp/article/jsssj/37/11/37_541/_pdf
• Text Lang: ja
• Data Source:
  • JaLC
  • NDL
  • Crossref
  • CiNii Articles
  • KAKEN
• Abstract License Flag: Disallowed