Microstructure of Erbium Oxide Thin Film on SUS316 Substrate with Y<sub>2</sub>O<sub>3</sub> or CeO<sub>2</sub> Buffer Layers Formed by MOCVD Method

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  • Microstructure of Erbium Oxide Thin Film on SUS316 Substrate with Y₂O₃ or CeO₂ Buffer Layers Formed by MOCVD Method

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Abstract

<p>Er2O3 has been known the best candidate material for insulating coating for liquid metal breeding blanket system. The formation of Er2O3 layer by MOCVD method can be succeeded on SUS316 substrate with CeO2 and Y2O3 buffer layers (100 nm and 500 nm) fabricated by RF sputtering, and their microstructures have been confirmed by SEM, TEM and STEM. The surface morphology of their layers was smaller granular structure than the previous study without buffer layer. According to cross sectional TEM (X-TEM) observation, Er2O3, CeO2/Y2O3 buffer, unknown layers and SUS substrate can be confirmed. CeO2 buffer layer has a granular structure, while Y2O3 has a columnar structure. Er2O3 layer formed on each buffer layer had finer structure without buffer layer. It has been also detected that each element does not exist so much in each layer by diffusion during fabrication according to STEM-EDS and HAADF imaging.</p>

Journal

  • MATERIALS TRANSACTIONS

    MATERIALS TRANSACTIONS 58 (2), 231-235, 2017

    The Japan Institute of Metals and Materials

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