Effect of Background Pressure on the Performance of Organic Field Effect Transistors with Copper Electrodes

• TRAN Cuong Manh

  School of Material Science, Japan Advanced Institute of Science and Technology

• MURAKAMI Tatsuya

  School of Material Science, Japan Advanced Institute of Science and Technology

• SAKAI Heisuke

  School of Material Science, Japan Advanced Institute of Science and Technology

• MURATA Hideyuki

  School of Material Science, Japan Advanced Institute of Science and Technology

Abstract

We demonstrate the effect of vacuum pressure on the mobility (µ) and the threshold voltage (V_th) of organic field effect transistor (OFETs) using copper as source-drain electrodes. OFETs with copper electrodes deposited at high background pressure are better in electric characteristics compared with traditional devices fabricated under low pressure using gold electrodes.

Journal

• IEICE Transactions on Electronics

  IEICE Transactions on Electronics E100.C (2), 122-125, 2017

  The Institute of Electronics, Information and Communication Engineers

Keywords

• pentacene OFETs
• organic electronics

Details

• CRID: 1390001204378827520
• NII Article ID: 130005306502
• DOI: 10.1587/transele.e100.c.122
• ISSN: 17451353
• ISSN: 09168524
• Web Site: https://www.jstage.jst.go.jp/article/transele/E100.C/2/E100.C_122/_pdf
• Text Lang: en
• Data Source:
  • JaLC
  • Crossref
  • CiNii Articles
  • KAKEN
• Abstract License Flag: Disallowed