Integration of a Low-Voltage Organic Field-Effect Transistor and a Sensing Capacitor for a Pressure-Sensing Device

• SAKAI Heisuke

  Japan Advanced Institute of Science and Technology

• TSUJI Yushi

  Japan Advanced Institute of Science and Technology

• MURATA Hideyuki

  Japan Advanced Institute of Science and Technology

Abstract

We integrate a pressure sensing capacitor and a low operation voltage OFET to develop a pressure sensor. The OFET was used as a readout device and an external pressure was loaded on the sensing capacitor. The OFET operates at less than 5 V and the change in the drain current in response to the pressure load (100 kPa) is two orders of magnitude.

Journal

• IEICE Transactions on Electronics

  IEICE Transactions on Electronics E100.C (2), 126-129, 2017

  The Institute of Electronics, Information and Communication Engineers

Keywords

• low-voltage operation
• pressure sensor
• organic field-effect transistor
• ferroelectric polymer

Details

• CRID: 1390282679355538560
• NII Article ID: 130005306503
• DOI: 10.1587/transele.e100.c.126
• ISSN: 17451353
• ISSN: 09168524
• Web Site: http://hdl.handle.net/10119/14716
• Web Site: https://www.jstage.jst.go.jp/article/transele/E100.C/2/E100.C_126/_pdf
• Text Lang: en
• Data Source:
  • JaLC
  • IRDB
  • Crossref
  • CiNii Articles
  • KAKEN
• Abstract License Flag: Disallowed