Unclamped Inductive Switching試験による4H-SiC MOSFETの最大接合温度の評価  [in Japanese] Investigation of Maximum Junction Temperature for 4H-SiC MOSFET during Unclamped Inductive Switching Test  [in Japanese]

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Author(s)

    • 安 俊傑 An Junjie
    • 筑波大学大学院数理物質科学研究科 電子・物理工学専攻 Graduate School of Pure and Applied Sciences, University of Tsukuba
    • 生井 正輝 Namai Masaki
    • 筑波大学大学院数理物質科学研究科 電子・物理工学専攻 Graduate School of Pure and Applied Sciences, University of Tsukuba
    • 岡本 大 Okamoto Dai
    • 筑波大学大学院数理物質科学研究科 電子・物理工学専攻 Graduate School of Pure and Applied Sciences, University of Tsukuba
    • 矢野 裕司 Yano Hiroshi
    • 筑波大学大学院数理物質科学研究科 電子・物理工学専攻 Graduate School of Pure and Applied Sciences, University of Tsukuba
    • 只野 博 Tadano Hiroshi
    • 筑波大学大学院数理物質科学研究科 電子・物理工学専攻 Graduate School of Pure and Applied Sciences, University of Tsukuba
    • 岩室 憲幸 Iwamuro Noriyuki
    • 筑波大学大学院数理物質科学研究科 電子・物理工学専攻 Graduate School of Pure and Applied Sciences, University of Tsukuba

Abstract

<p>Normally, thermal breakdown is one of the serious failure phenomena in the power device application, which drives the researchers to focus on exploration of the failure mechanism and the new evaluation method for power device. In this paper, unclamped inductive switching (UIS) test is presented to evaluate energy handing ability and maximum junction temperature of 1200V/19A SiC MOSFET during avalanche mode. It is verified that commercial 1200V/19A SiC MOSFET can easily withstand almost ten microseconds avalanche time and around 924 K maximum junction temperature with 1 mH inductance and 400 V DC bus at the case temperature of 300 K in avalanche mode. In addition, three reasonable evaluation methods of the maximum junction temperature for SiC MOSFET are summarized at different case temperatures.</p>

Journal

  • IEEJ Transactions on Electronics, Information and Systems

    IEEJ Transactions on Electronics, Information and Systems 137(2), 216-221, 2017

    The Institute of Electrical Engineers of Japan

Codes

  • NII Article ID (NAID)
    130005308467
  • NII NACSIS-CAT ID (NCID)
    AN10065950
  • Text Lang
    JPN
  • ISSN
    0385-4221
  • NDL Article ID
    027967342
  • NDL Call No.
    Z16-795
  • Data Source
    NDL  J-STAGE 
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