Effects of Growth Conditions on AlN Layer Grown by Ga-Al Liquid Phase Epitaxy

• Adachi Masayoshi

  Institute of Multidisciplinary Research for Advanced Materials (IMRAM), Tohoku University

• Sekiya Ryuta

  Institute of Multidisciplinary Research for Advanced Materials (IMRAM), Tohoku University

• Fukuyama Hiroyuki

  Institute of Multidisciplinary Research for Advanced Materials (IMRAM), Tohoku University

抄録

We developed an original liquid phase epitaxy technique that uses Ga-Al solution to grow AlN on surface nitrided sapphire substrates. In this paper, effects of temperature, solution composition, and N₂ gas flow rate on the growth of AlN layer were investigated. The AlN layer grown in the solution with higher Al content and higher growth temperature tended to dissolve into the solution, thus, the AlN layers exhibited inhomogeneous surface. The growth rate had a maximum at 60 mol%Al and at 1673 K for solution composition dependence and growth temperature dependence, respectively. On the other hand, the growth rate monotonically increased with increasing N₂ gas flow rate. Based on these results, growth mechanism and rate-determined step of this liquid phase epitaxy process were discussed.

収録刊行物

• MATERIALS TRANSACTIONS

  MATERIALS TRANSACTIONS 58 (3), 509-512, 2017

  公益社団法人 日本金属学会

キーワード

• solution growth
• aluminum nitride
• epitaxial growth
• gallium-aluminum flux

詳細情報

• CRID: 1390282679230773376
• NII論文ID: 130005397732
• NII書誌ID: AA1151294X
• DOI: 10.2320/matertrans.m2016413
• ISSN: 13475320
• ISSN: 13459678
• NDL書誌ID: 028017681
• Web Site: http://id.ndl.go.jp/bib/028017681
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I028017681
• Web Site: https://www.jstage.jst.go.jp/article/matertrans/58/3/58_M2016413/_pdf
• 本文言語コード: en
• データソース種別:
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  • NDL
  • Crossref
  • CiNii Articles
  • KAKEN
• 抄録ライセンスフラグ: 使用不可