Ultrathin Si or Ge Films on Ag Formed by Metal-Induced Layer Exchange Method

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  • KUROSAWA Masashi
    Institute of Materials and Systems for Sustainability (IMaSS), Nagoya University Institute for Advanced Research, Nagoya University Graduate School of Engineering, Nagoya University
  • OHTA Akio
    Institute for Advanced Research, Nagoya University Graduate School of Engineering, Nagoya University
  • ARAIDAI Masaaki
    Institute of Materials and Systems for Sustainability (IMaSS), Nagoya University Institute for Advanced Research, Nagoya University Graduate School of Engineering, Nagoya University
  • ZAIMA Shigeaki
    Institute of Materials and Systems for Sustainability (IMaSS), Nagoya University Graduate School of Engineering, Nagoya University

Bibliographic Information

Other Title
  • 金属誘起層交換法によるAg上Si，Ge極薄膜の形成
  • 金属誘起層交換法によるAg上Si,Ge極薄膜の形成 : シリセン,ゲルマネンの創製を目指して
  • キンゾク ユウキソウ コウカンホウ ニ ヨル Ag ジョウ Si,Ge ゴクウスマク ノ ケイセイ : シリセン,ゲルマネン ノ ソウセイ オ メザシテ
  • —シリセン，ゲルマネンの創製を目指して—
  • —A First Step Towards Creation of Silicene and Germanene—

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Abstract

<p>Two-dimensional (2D) honeycomb sheet of Si and Ge, known as silicene and germanene, respectively, is a promising material for next-generation group-IV electronics. Most researchers have synthesized them by deposition of Si or Ge atoms on metal substrates. On the other hand, this paper proposes a unique technique for synthesizing these 2D honeycomb sheets on Ag-covered Si or Ge substrate by using Ag-induced layer exchange (ALEX) process. Our method enables surface segregation of Si or Ge atoms from the underlying substrate by tuning annealing condition during ALEX. We believe that the present study is a first step towards creation of 2D honeycomb sheets on a Si chip.</p>

Journal

  • Hyomen Kagaku

    Hyomen Kagaku 37 (8), 374-379, 2016

    The Surface Science Society of Japan

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