Efficient Isolation of Completely Decorated Polyhedral Oligomeric Silsesquioxanes by Utilizing Imine Bond Formation

• Imoto Hiroaki

  Faculty of Molecular Chemistry and Engineering, Graduate School of Science and Technology, Kyoto Institute of Technology

• Wada Satoshi

  Faculty of Molecular Chemistry and Engineering, Graduate School of Science and Technology, Kyoto Institute of Technology

• Naka Kensuke

  Faculty of Molecular Chemistry and Engineering, Graduate School of Science and Technology, Kyoto Institute of Technology

抄録

Eight corners of a polyhedral oligomeric silsesquioxane (POSS) were completely decorated via imine bond formation between octa(3-aminopropyl)POSS and arylaldehyde derivatives. The reaction proceeded smoothly without catalyst, heating, additives, and inert atmosphere. Surprisingly, the isolation of a completely decorated POSS is very easy; it caused precipitation with high purity. The present method is applicable to a wide variety of substrates.

収録刊行物

• Chemistry Letters

  Chemistry Letters 45 (11), 1256-1258, 2016

  公益社団法人 日本化学会

キーワード

• Polyhedral oligomeric silsesquixane (POSS)
• Imination
• Completely decorated POSS

詳細情報

• CRID: 1390001204587524224
• NII論文ID: 130005509387
• DOI: 10.1246/cl.160679
• ISSN: 13480715
• ISSN: 03667022
• Web Site: https://www.journal.csj.jp/doi/pdf/10.1246/cl.160679
• 本文言語コード: en
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• 抄録ライセンスフラグ: 使用不可