Structural and Electrical Properties of BaPrO_3-<i>δ</i> Thin Film with Oxygen Vacancies

• Furuichi Shoto

  Department of Applied Physics, Tokyo University of Science

• Tsuchiya Takashi

  International Center for Materials Nanoarchitectonics (WPI-MANA), National Institute for Materials Science (NIMS)

• Horiba Koji

  Photon Factory, KEK

• Kobayashi Masaki

  Photon Factory, KEK

• Minohara Makoto

  Photon Factory, KEK

• Kumigashira Hiroshi

  Photon Factory, KEK

• Higuchi Tohru

  Department of Applied Physics, Tokyo University of Science

抄録

The in-plane-oriented BaPrO_3-δ thin film with mixed valence states has been prepared on an Al₂O₃ (0001) substrate by RF magnetron sputtering. The lattice constant decreases with increasing film thickness. The thin film has the mixed valence states of Pr⁴⁺ and Pr³⁺. The ～168 nm thickness film with small lattice constant exhibits high electrical conductivity and low activation energy of 0.58 eV at dry atmosphere. The wet-annealed thin film shows high proton conduction, which is required as electrolyte of solid oxide fuel cell, at 300 ～ 600 °C.

収録刊行物

• Transactions of the Materials Research Society of Japan

  Transactions of the Materials Research Society of Japan 42 (2), 15-18, 2017

  一般社団法人 日本MRS

キーワード

• BaPrO_3-<i>δ</i>
• RF magnetron sputtering
• X-ray photoemission spectroscopy (XPS)
• Mixed valence states

詳細情報

• CRID: 1390282680489865600
• NII論文ID: 130005530572
• DOI: 10.14723/tmrsj.42.15
• ISSN: 21881650
• ISSN: 13823469
• Web Site: https://www.jstage.jst.go.jp/article/tmrsj/42/2/42_15/_pdf
• 本文言語コード: en
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