Interaction Energy between Graphene and a Silicon Substrate Using Pairwise Summation of the Lennard-Jones Potential

• Inui Norio

  Graduate School of Engineering, University of Hyogo

• Iwasaki Sho

  Graduate School of Engineering, University of Hyogo

抄録

We consider the computation of a long-range interaction energy between a single graphene sheet and a silicon substrate, which arises from vacuum fluctuations. The interaction energy obtained by summation of the Lennard Jones potential between a carbon atom in a single graphene sheet and a silicon atom is compared with the dispersion energy (Casimir energy) obtained by combining the Lifshitz theory and the Dirac model for graphene. Deviation of the pairwise summation of the Lennard-Jones potential from the Casimir energy is corrected by adding a power function term, whose coefficient depends on the distance between atoms. We also consider the interaction between a graphene sheet and a silicon dioxide substrate. [DOI: 10.1380/ejssnt.2017.40]

収録刊行物

• e-Journal of Surface Science and Nanotechnology

  e-Journal of Surface Science and Nanotechnology 15 (0), 40-49, 2017

  公益社団法人 日本表面真空学会

キーワード

• Construction and use of effective interatomic interactions
• Atom-solid interactions
• Carbon
• Silicon
• Silicon oxides

詳細情報

• CRID: 1390282680164218496
• NII論文ID: 130005574227
• DOI: 10.1380/ejssnt.2017.40
• ISSN: 13480391
• Web Site: https://www.jstage.jst.go.jp/article/ejssnt/15/0/15_40/_pdf
• 本文言語コード: en
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