Vacuum Annealing and Passivation of HfS<sub>2</sub> FET for Mitigation of Atmospheric Degradation

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  • UPADHYAYA Vikrant
    Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
  • KANAZAWA Toru
    Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
  • MIYAMOTO Yasuyuki
    Department of Electrical and Electronic Engineering, Tokyo Institute of Technology

Abstract

<p>The performance of devices based on two dimensional (2D) materials is significantly affected upon prolonged exposure to atmosphere. We analyzed time based environmental degradation of electrical properties of HfS2 field effect transistors. Atmospheric entities like oxygen and moisture adversely affect the device surface and reduction in drain current is observed over period of 48 hours. Two corrective measures, namely, PMMA passivation and vacuum annealing, have been studied to address the diminution of current by contaminants. PMMA passivation prevents the device from environment and reduces the effect of Coulomb scattering. Improvement in current characteristics signifies the importance of dielectric passivation for 2D materials. On the other hand, vacuum annealing is useful in removing contaminants from the affected surface. In order to figure out optimum process conditions, properties have been studied at various annealing temperatures. The improvement in drain current level was observed upon vacuum annealing within optimum range of annealing temperature.</p>

Journal

  • IEICE Transactions on Electronics

    IEICE Transactions on Electronics E100.C (5), 453-457, 2017

    The Institute of Electronics, Information and Communication Engineers

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