Embedding of Ti Nanodots into SiO_x and Its Impact on Resistance Switching Behaviors

• KATO Yusuke

  Graduate School of Engineering, Nagoya University

• OHTA Akio

  Graduate School of Engineering, Nagoya University Institute for Advanced Research, Nagoya University

• IKEDA Mitsuhisa

  Graduate School of Engineering, Nagoya University

• MAKIHARA Katsunori

  Graduate School of Engineering, Nagoya University

• MIYAZAKI Seiichi

  Graduate School of Engineering, Nagoya University

Abstract

We have studied the formation of Ti-nanodots (NDs) by remote H₂ plasma (H₂-RP) exposure and investigated how the embedding of Ti-NDs affects the resistive switching properties of Si-rich oxides (SiO_x) because it is expected that NDs will trigger the formation of the conductive filament path in SiO_x. Ti-NDs with an areal density as high as 10¹¹ cm^-2 were fabricated by exposing a Ge/Ti stacked layer to the H₂-RP without external heating, and changes in the chemical structure of Ge/Ti stacked layer with the Ti-NDs formation were evaluated by using hard x-ray photoemission spectroscopy (HAXPES) and x-ray photoelectron spectroscopy (XPS). Resistive switching behaviors of SiO_x with Ti-NDs were measured from current-voltage curves and compared to the results obtained from samples of SiO_x with a Ti thin layer.

Journal

• IEICE Transactions on Electronics

  IEICE Transactions on Electronics E100.C (5), 468-474, 2017

  The Institute of Electronics, Information and Communication Engineers

Keywords

• resistive random access memories (ReRAMs)
• Ti-nanodots (NDs)
• Si-rich oxide (SiO_x)

Details

• CRID: 1390001204379378560
• NII Article ID: 130005631611
• DOI: 10.1587/transele.e100.c.468
• ISSN: 17451353
• ISSN: 09168524
• Web Site: https://www.jstage.jst.go.jp/article/transele/E100.C/5/E100.C_468/_pdf
• Text Lang: en
• Data Source:
  • JaLC
  • Crossref
  • CiNii Articles
  • KAKEN
• Abstract License Flag: Disallowed