Challenges and Progress in Low Defectivity for advanced ArF Lithography Processes using Surface Localized Material Technology

DOI Web Site Web Site 参考文献1件
  • Shirakawa Michihiro
    Research & Development management headquarters, Electronic Materials Research Laboratories, FUJIFILM Corporation
  • Fujimori Toru
    Research & Development management headquarters, Electronic Materials Research Laboratories, FUJIFILM Corporation
  • Tango Naohiro
    Research & Development management headquarters, Electronic Materials Research Laboratories, FUJIFILM Corporation
  • Marumo Kazuhiro
    Research & Development management headquarters, Electronic Materials Research Laboratories, FUJIFILM Corporation
  • Yamamoto Kei
    Research & Development management headquarters, Electronic Materials Research Laboratories, FUJIFILM Corporation
  • Takahashi Hidenori
    Research & Development management headquarters, Electronic Materials Research Laboratories, FUJIFILM Corporation
  • Nishio Ryo
    Research & Development management headquarters, Synthetic Organic Chemistry Laboratories, FUJIFILM Corporation
  • Goto Akiyoshi
    Research & Development management headquarters, Synthetic Organic Chemistry Laboratories, FUJIFILM Corporation
  • Fujita Mitsuhiro
    Research & Development management headquarters, Analysis Technology Center, FUJIFILM Corporation

この論文をさがす

抄録

The main challenge in ArF lithography is to reduce cost of ownership (CoO) because increase in multi-patterning process is generally required to obtain a fine pattern. As a consequence, industry strongly requires ArF lithography process with a fast scan speed scanner and low defectivity material for CoO. The breakthrough technology to improve defectivity and resolution simultaneously was the polarity-change property of film surface from hydrophobic to hydrophilic after alkaline development process because a property after development process should be only associated with defectivity, not with fast scan speed. The materials with high polarity change function were explored to EUV process to achieve low defectivity with good lithography performances.

収録刊行物

参考文献 (1)*注記

もっと見る

キーワード

詳細情報 詳細情報について

問題の指摘

ページトップへ