Absorption Coefficient Measurement Advanced Method of EUV Resist by Direct-Resist Coating on a Photodiode

• Niihara Shota

  Center for EUV Lithography, LASTI, University of Hyogo

• Mamezaki Daiki

  Center for EUV Lithography, LASTI, University of Hyogo

• Watanabe Masanori

  Center for EUV Lithography, LASTI, University of Hyogo

• Harada Tetsuo

  Center for EUV Lithography, LASTI, University of Hyogo

• Watanabe Takeo

  Center for EUV Lithography, LASTI, University of Hyogo

Abstract

Since the resist thickness in EUV lithography of which base material mainly consists of an organic material is thin, the EUV photon energy is not be used efficiently for the EUV chemical reaction. In order to increase chemical reaction incidence in the EUV photon energy, a resist having a high-absorption material compounds for the EUV photons has been developed. It has been studied to increase the absorption including high-absorption materials such as hafnium and zinc, tin oxide, tellurium. For the development of the next-generation high sensitive resist materials, since it is significant to measure the EUV absorption coefficient accurately, it is necessary to measure the transmittance and resist thickness to obtain the absorption coefficient accurately. Thus, we have developed to evaluate the absorption coefficient of the EUV resist at BL 10 beamline of NewSUBARU synchrotron hlight facility. In the previous paper, we measured the EUV resist transmittance on a freestanding membrane. However, since it was very difficult to coat resist on a membrane with high uniformity, the transmittance could not be measured accurately. Thus, we have developed the precise transmittance measurement method by coating resist on a photodiode directly, and the resist thickness on a photodiode was measured by XRR accurately instead on conventional method. Finally, the accurate measurement of EUV resist absorption coefficient was achieved.

Journal

• Journal of Photopolymer Science and Technology

  Journal of Photopolymer Science and Technology 30 (1), 87-92, 2017

  The Society of Photopolymer Science and Technology(SPST)

Keywords

• EUV resist
• Absorption coefficient
• Transmittance measurement
• XRR

Details

• CRID: 1390001204324211200
• NII Article ID: 130005950331
• NII Book ID: AA11576862
• DOI: 10.2494/photopolymer.30.87
• ISSN: 13496336
• ISSN: 09149244
• NDL BIB ID: 028336393
• Web Site: http://id.ndl.go.jp/bib/028336393
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I028336393
• Web Site: https://www.jstage.jst.go.jp/article/photopolymer/30/1/30_87/_pdf
• Text Lang: en
• Data Source:
  • JaLC
  • NDL
  • Crossref
  • CiNii Articles
  • KAKEN
• Abstract License Flag: Disallowed