Perpendicularly-Oriented Block Copolymers Containing Silicon-Rich Hyperbranched Polymers for High Resistance to O₂-RIE

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  • Yamazaki Seina
    Department of Materials Science and Engineering, School of Materials and Chemical Technology, Tokyo Institute of Technology
  • Odashima Rin
    Department of Materials Science and Engineering, School of Materials and Chemical Technology, Tokyo Institute of Technology
  • Seshimo Takehiro
    Tokyo Ohka Kogyo Co., Ltd.
  • Hayakawa Teruaki
    Department of Materials Science and Engineering, School of Materials and Chemical Technology, Tokyo Institute of Technology

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  • Perpendicularly-Oriented Block Copolymers Containing Silicon-Rich Hyperbranched Polymers for High Resistance to O<sub>2</sub>-RIE

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The directed self-assembly (DSA) of block copolymers (BCPs) has recently become a viable alternative technique for the nanofabrication of semiconductors. To facilitate pattern transfer onto silicon (Si) wafers from BCP masks, a novel class of Si-rich BCPs with hyperbranched polysiloxane side chains were synthesized in this report. The resistance to oxygen-reactive ion etching (O2-RIE) was quantified for the linear and modified-hyperbranched polysiloxanes, revealing that the modified-hyperbranched polysiloxanes exhibited increased O2-RIE resistances. Furthermore, by tailoring the chemical properties on the end-groups of the polysiloxane side chains, atomic force microscopy (AFM) and scanning electron microscopy (SEM) studies revealed that perpendicularly-oriented lamellae could be observed on the thin films.

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