Fundamental Device Characteristics of Hot Carrier Solar Cell Using InAs/GaAs Quantum Dot Superlattices.

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  • WATANABE Daiki
    Department of Electrical and Electronic Engineering, Graduate School of Engineering, Kobe University
  • HARADA Yukihiro
    Department of Electrical and Electronic Engineering, Graduate School of Engineering, Kobe University
  • KITA Takashi
    Department of Electrical and Electronic Engineering, Graduate School of Engineering, Kobe University

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  • InAs/GaAs量子ドット超格子を用いたホットキャリア型太陽電池の基礎特性
  • InAs/GaAs リョウシ ドット チョウコウシ オ モチイタ ホットキャリアガタ タイヨウ デンチ ノ キソ トクセイ

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Abstract

<p>We demonstrated hot-carrier effects in a solar cell containing InAs/GaAs quantum-dots superlattice structure as a light absorber. The bandgap of the host semiconductor plays an important role as an energy-selective barrier for hot carriers created in quantum-dot superlattices. The short circuit current density increases linearly with the excitation photon density, suggesting that two photons absorption or Auger recombination processes can be ignorable. Furthermore, we found that the open circuit voltage of the quantum-dot superlattice solar cell increases drastically in contrast to a solar cell containing conventional quantum dots without a superlattice structure. These results clarify effects of hot carrier population in the one-dimensional energy dispersion of the quantum-dot superlattice.</p>

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