Fabrication and Operation of Monolayer Mott FET at Room Temperature

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Author(s)

    • Yang Fan Yang Fan
    • Research Center of Integrative Molecular Systems (CIMoS), Institute for Molecular Science|School of Materials and Chemical Technology, Tokyo Institute of Technology
    • Yamamoto Hiroshi M. Yamamoto Hiroshi M.
    • Research Center of Integrative Molecular Systems (CIMoS), Institute for Molecular Science|School of Materials and Chemical Technology, Tokyo Institute of Technology|RIKEN

Abstract

<p>Self-assembled monolayer FET based on a TTF derivative is described (FET = field-effect-transistor, TTF = tetrathiafulvalene). The molecule is anchored on an alumina dielectric layer through covalent bonding of a phosphonic acid linker. A p-type monolayer FET device is achieved and subsequent chemical doping of this monolayer with F<sub>4</sub>TCNQ dopants results in an ambipolar device. (F<sub>4</sub>TCNQ = 2,3,5,6-Tetrafluoro-7,7,8,8-tetracyanoquinodimethane) Several strange behaviors including a gate voltage shift upon doping seem to be consistent with organic monolayer Mott FET. Finally, temperature dependence of the FET performance, which also fit the anticipated Mott FET behavior, is discussed.</p>

Journal

  • Bulletin of the Chemical Society of Japan

    Bulletin of the Chemical Society of Japan 90(11), 1259-1266, 2017

    The Chemical Society of Japan

Codes

  • NII Article ID (NAID)
    130006201447
  • NII NACSIS-CAT ID (NCID)
    AA00580132
  • Text Lang
    ENG
  • ISSN
    0009-2673
  • NDL Article ID
    028641095
  • NDL Call No.
    Z53-B35
  • Data Source
    NDL  J-STAGE 
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