Effects of annealing on CH3NH3PbI3(Cl) perovskite photovoltaic devices
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- OKU Takeo
- Department of Materials Science, University of Shiga Prefecture
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- OHISHI Yuya
- Department of Materials Science, University of Shiga Prefecture
書誌事項
- タイトル別名
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- Effects of annealing on CH<sub>3</sub>NH<sub>3</sub>PbI<sub>3</sub>(Cl) perovskite photovoltaic devices
抄録
The effects of annealing temperatures on perovskite-type photovoltaic devices were investigated. CH3NH3PbI3 photovoltaic devices doped with Cl were fabricated by the spin-coating method, and the microstructures of the cells were investigated by X-ray diffraction, optical microscopy and scanning electron microscopy. The current density–voltage characteristics and incident photon-to-current conversion efficiencies were improved by application of an appropriate annealing process, leading to improvement of the photoconversion efficiencies to 13.28%. Microstructure analysis indicated that the perovskite layer had a homogeneous morphology after annealing at 140°C, and that the devices provided stability in air.
収録刊行物
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- Journal of the Ceramic Society of Japan
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Journal of the Ceramic Society of Japan 126 (1), 56-60, 2018
公益社団法人 日本セラミックス協会
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詳細情報 詳細情報について
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- CRID
- 1390001205286669952
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- NII論文ID
- 130006301593
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- ISSN
- 13486535
- 18820743
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- 本文言語コード
- en
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- データソース種別
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- JaLC
- Crossref
- CiNii Articles
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- 抄録ライセンスフラグ
- 使用不可