Study on Resist Performance of Noria Derivatives Modified with Various Protection Ratios of Acetal Moieties by means of Extreme Ultraviolet Irradiation
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- Yamamoto Hiroki
- The Institute of Scientific and Industrial Research, Osaka University
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- Kudo Hiroto
- Faculty of Chemistry, Materials and Bioengineering, Kansai University
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- Kozawa Takahiro
- The Institute of Scientific and Industrial Research, Osaka University
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抄録
The requirements for next generation resist materials in extreme ultraviolet (EUV) lithography are very challenging. Therefore, the development of new resist materials has been expected to meet strict requirements. Molecular resists are promising resists owing to the small size of their building blocks. In this study, we examined lithographic performances, such as sensitivity and patterning, using noria derivative (noria-CHVEs, Resists 1-3) under EUV and a 75 keV electron beam (EB) exposure system. In particular, the effect of the protection ratio on the lithographic performances was studied by changing the protection ratio. The sensitivities of noria-CHVEs showed high values in the range between 1.8 and 3.0 mJ/cm2. Resist 2 could provide a resist pattern with a higher resolution than Resists 1 and Resist 3, i.e., a semi-isolated pattern with a line width of 30 nm (pitch: 100 nm). These results indicate that the synthesized noria-CHVEs are promising EUV resist materials.
収録刊行物
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- Journal of Photopolymer Science and Technology
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Journal of Photopolymer Science and Technology 30 (6), 627-631, 2017
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詳細情報 詳細情報について
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- CRID
- 1390282679301164032
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- NII論文ID
- 130006309146
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- NII書誌ID
- AA11576862
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- ISSN
- 13496336
- 09149244
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- NDL書誌ID
- 028726453
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- 本文言語コード
- en
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- データソース種別
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- JaLC
- NDL
- Crossref
- CiNii Articles
- KAKEN
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- 抄録ライセンスフラグ
- 使用不可