A 0.18-µm CMOS time-domain capacitive-sensor interface for sub-1mG MEMS accelerometers

• Takayasu Motohiro

  Tokyo Institute of Technology

• Dosho Shiro

  Tokyo Institute of Technology

• Ito Hiroyuki

  Tokyo Institute of Technology

• Yamane Daisuke

  Tokyo Institute of Technology

• Konishi Toshifumi

  Tokyo Institute of Technology NTT Advanced Technology Co.

• Machida Katsuyuki

  Tokyo Institute of Technology

• Ishihara Noboru

  Tokyo Institute of Technology

• Masu Kazuya

  Tokyo Institute of Technology

Abstract

A high-resolution capacitive-sensor interface for sub-1mG MEMS accelerometers is presented herein. A time-domain capacitive-sensor interface based on a relaxation oscillator with noise reduction is proposed to achieve a high resolution. A prototype interface is fabricated using a 0.18-µm CMOS process. The prototype is linked with a sub-1mG MEMS accelerometer, and its performance is investigated experimentally. The results confirm that the proposed interface is able to detect sub-1mG acceleration with a signal-to-noise ratio of 90.3 dB (an acceleration noise-floor of 9.0 µG/√Hz with a bandwidth of 12 Hz).

Journal

• IEICE Electronics Express

  IEICE Electronics Express 15 (2), 20171227-20171227, 2018

  The Institute of Electronics, Information and Communication Engineers

Keywords

• time domain
• capacitive-sensor interface
• relaxation oscillator
• sub-1mG
• microelectromechanical systems (MEMS)
• accelerometer

Details

• CRID: 1390001205218499328
• NII Article ID: 130006320958
• DOI: 10.1587/elex.15.20171227
• ISSN: 13492543
• Web Site: https://www.jstage.jst.go.jp/article/elex/15/2/15_15.20171227/_pdf
• Text Lang: en
• Data Source:
  • JaLC
  • Crossref
  • CiNii Articles
  • KAKEN
• Abstract License Flag: Disallowed