Improvement of Endurance Characteristics for Al-Gate Hf-Based MONOS Structures on Atomically Flat Si(100) Surface Realized by Annealing in Ar/H₂ Ambient

• KUDOH Sohya

  Tokyo Institute of Technology

• OHMI Shun-ichiro

  Tokyo Institute of Technology

Abstract

In this study, the effect of atomically flat Si(100) surface on Hf-based Metal-Oxide-Nitride-Oxide-Silicon (MONOS) structure was investigated. After the atomically flat Si(100) surface formation by annealing at 1050℃/60min in Ar/4%H₂ ambient, HfO₂(O)/HfN_1.0(N)/HfO₂(O) structure with thickness of 10/3/2nm, respectively, was in-situ deposited by electron cyclotron resonance (ECR) plasma sputtering. The memory window (MW) of Al/HfO₂/HfN_1.0/HfO₂/p-Si(100) diodes was increased from 1.0V to 2.5V by flattening of Si(100) surface. The program and erase (P/E) voltage/time were set as 10V/5s and -8V/5s, respectively. Furthermore, it was found that the gate current density after the 10³P/E cycles was decreased one order of magnitude by flattening of Si(100) surface in Ar/4.0%H₂ ambient.

Journal

• IEICE Transactions on Electronics

  IEICE Transactions on Electronics E101.C (5), 328-333, 2018-05-01

  The Institute of Electronics, Information and Communication Engineers

Keywords

• Hf-based MONOS structure
• ECR plasma sputtering
• endurance
• atomically flat Si surface
• Ar/H₂ ambient

Details

• CRID: 1390282679354611840
• NII Article ID: 130006729708
• DOI: 10.1587/transele.e101.c.328
• ISSN: 17451353
• ISSN: 09168524
• Web Site: https://www.jstage.jst.go.jp/article/transele/E101.C/5/E101.C_328/_pdf
• Text Lang: en
• Data Source:
  • JaLC
  • Crossref
  • CiNii Articles
  • KAKEN
• Abstract License Flag: Disallowed