Surface-normal electro-optic-polymer modulator with silicon subwavelength grating
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- Kosugi Yuji
- Department of Electrical Engineering and Information Systems, School of Engineering, The University of Tokyo
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- Yamada Toshiki
- National Institute of Information and Communications Technology
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- Otomo Akira
- National Institute of Information and Communications Technology
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- Nakano Yoshiaki
- Department of Electrical Engineering and Information Systems, School of Engineering, The University of Tokyo
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- Tanemura Takuo
- Department of Electrical Engineering and Information Systems, School of Engineering, The University of Tokyo
Abstract
<p>We propose novel silicon-based surface-normal optical modulator using electro-optic (EO) polymer. The EO polymer is embedded inside a thin silicon subwavelength grating layer, which is used as both the interdigitated electrodes for effective poling of the EO polymer, and as high-Q resonant structure for the incident light to enable efficient modulation. We numerically demonstrate 10-dB intensity modulation at 1550-nm wavelength under a refractive index change of only 3.8 × 10−4, corresponding to the driving voltage below 1 V. Total-reflectance phase modulator is also demonstrated by adding a backside reflector. With inherently high-speed response over several tens of GHz, scalability to dense 2-D array integrated with CMOS driver circuitry, and relatively easy and low-cost fabrication without epitaxial process, the proposed device may find versatile applications in optical interconnects, free-space optical communications, imaging and sensing.</p>
Journal
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- IEICE Electronics Express
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IEICE Electronics Express 13 (17), 20160595-20160595, 2016
The Institute of Electronics, Information and Communication Engineers
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Keywords
Details 詳細情報について
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- CRID
- 1390282680196052864
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- NII Article ID
- 130006895070
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- ISSN
- 13492543
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- Text Lang
- en
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- Data Source
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- JaLC
- Crossref
- CiNii Articles
- KAKEN
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- Abstract License Flag
- Disallowed