Surface Electronic Structure of Proton-doped YSZ Thin Film by Soft-X-ray Photoemission Spectroscopy

• Takayanagi Makoto

  Department of Applied Physics, Tokyo University of Science

• Tsuchiya Takashi

  International Center for Materials Nanoarchitectonics (WPI-MANA), National Institute for Materials Science (NIMS)

• Minohara Makoto

  Photon Factory, KEK

• Kobayashi Masaki

  Photon Factory, KEK

• Horiba Koji

  Photon Factory, KEK

• Kumigashira Hiroshi

  Photon Factory, KEK

• Higuchi Tohru

  Department of Applied Physics, Tokyo University of Science

Abstract

Yttria-stabilized zirconia (Zr_0.92Y_0.08O_2-δ:YSZ) thin films have been prepared on Al₂O₃ (0001) substrates by RF magnetron sputtering. The as-deposited YSZ thin films prepared at 500 ºC exhibited the (111) and (200) peak at 2θ values of 30.0º and 34.8º, respectively, which close to the peak positions of the YSZ single crystal. The Zr⁴⁺, Y³⁺ valence states and valence band were confirmed by photoemission spectroscopy. When the as-deposited YSZ thin films were annealed in the saturated H₂O atmosphere, the Fermi level shifted to conduction band side by 1.0 eV. The above result indicates that the proton of the H₂O annealed YSZ thin film acts as donor ions in the surface state.

Journal

• Transactions of the Materials Research Society of Japan

  Transactions of the Materials Research Society of Japan 42 (3), 61-64, 2017

  The Materials Research Society of Japan

Keywords

• YSZ
• X-ray photoemission spectroscopy (XPS)
• Valence band

Details

• CRID: 1390001205513207168
• NII Article ID: 130006943318
• DOI: 10.14723/tmrsj.42.61
• ISSN: 21881650
• ISSN: 13823469
• Web Site: https://www.jstage.jst.go.jp/article/tmrsj/42/3/42_61/_pdf
• Text Lang: en
• Data Source:
  • JaLC
  • Crossref
  • CiNii Articles
  • KAKEN
• Abstract License Flag: Disallowed