触媒化学気相堆積(Cat-CVD)法による太陽電池用高品質パッシベーション膜の形成  [in Japanese] Formation of High-Quality Passivation Films for Solar Cells by Cat-CVD  [in Japanese]

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Author(s)

Abstract

<p>Back-contact c-Si solar cells can realize superior performance due to no shadowing loss. Surface passivation with excellent quality is required for achieving sufficient conversion efficiency in the back-contact cells. Cat-CVD can produce high-quality passivation films owing to its plasma-damage-less nature. SiN<sub>x</sub> deposition at a low temperature and successive post annealing leads to a surface recombination velocity (SRV) of < 5 cm/s. The exposure of c-Si wafers to catalytically generated phosphorus radicals can form ultra-thin highly-doped layers (Cat-doping). This P-doped region acts to reduce an SRV to < 2 cm/s by combining with a Cat-CVD SiN<sub>x</sub> film. We have also established the passivation of rear c-Si surfaces by Cat-CVD a-Si with suppressing epitaxial growth by introducing ultra-thin oxide layers formed by dipping in H<sub>2</sub>O<sub>2</sub>. The formation of doped a-Si by Cat-doping has also been demonstrated, which will be applicable to the formation of patterned doping regions in Si heterojunction back-contact cells.</p>

Journal

  • Hyomen Kagaku

    Hyomen Kagaku 38(5), 234-239, 2017

    The Surface Science Society of Japan

Codes

  • NII Article ID (NAID)
    130007332061
  • Text Lang
    JPN
  • ISSN
    0388-5321
  • Data Source
    J-STAGE 
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