Fabrication of PbS QD/Silicon Hybrid Infrared Photodiode for LSI Platform

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  • Higo Akio
    VLSI Design and Education Research Center, The University of Tokyo
  • Mita Yoshio
    Graduate School of Engineering, The University of Tokyo
  • Wang Haibin
    Research Center for Advanced Science and Technology, The University of Tokyo
  • Kubo Takaya
    Research Center for Advanced Science and Technology, The University of Tokyo
  • Segawa Hiroshi
    Research Center for Advanced Science and Technology, The University of Tokyo
  • Usami Naoto
    Graduate School of Engineering, The University of Tokyo
  • Okamoto Yuki
    Graduate School of Engineering, The University of Tokyo
  • Yamada Kentaro
    Graduate School of Engineering, The University of Tokyo
  • Takeshiro Yudai
    Graduate School of Engineering, The University of Tokyo
  • Sugiyama Masakazu
    Research Center for Advanced Science and Technology, The University of Tokyo

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Other Title
  • LSI一体集積のためのシリコン上PbS量子ドット赤外フォトダイオードの試作
  • LSI イッタイ シュウセキ ノ タメ ノ シリコン ジョウ PbS リョウシ ドット セキガイ フォトダイオード ノ シサク

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Abstract

<p>Near-infrared detectors by silicon based devices with large scale integration are very attractive for secure applications about image sensors. Beyond the silicon bandgap, we focus on PbS colloidal quantum dots (CQDs) and silicon integration. In this paper, we investigated fabrication processes of PbS CQDs and silicon hybrid IR detector. Temperature dependent photoluminescence of PbS CQDs thin films are measured and we found the bandgap of PbS CQDs do not change by various temperature. Optical response by a spectrometer were observed in 1550 nm range.</p>

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