Modulation transfer function analysis of silicon X-ray sensor with trench-structured photodiodes

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Author(s)

    • Iwasa Jumpei
    • Center for Microelectronic Systems, Kyushu Institute of Technology
    • Takane Yuta
    • Center for Microelectronic Systems, Kyushu Institute of Technology
    • Sakamoto Kenji
    • Center for Microelectronic Systems, Kyushu Institute of Technology
    • Baba Akiyoshi
    • Center for Microelectronic Systems, Kyushu Institute of Technology
    • Arima Yutaka
    • Center for Microelectronic Systems, Kyushu Institute of Technology

Abstract

<p>A silicon X-ray sensor with trench-structured photodiodes was studied and the influence of Compton scattering was estimated. By irradiating the target pixel with X-rays and measuring the signal from adjacent pixels, X-ray scattering and pixel blur of the proposed sensor was determined. An X-ray sensor with a length of 22.6 mm was designed and fabricated, and its modulation transfer function (MTF) was obtained. A sensor structure to improve the MTF level to that of CdTe was proposed.</p>

Journal

  • IEICE Electronics Express

    IEICE Electronics Express 15(11), 20180177-20180177, 2018

    The Institute of Electronics, Information and Communication Engineers

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