Angular Distribution of Secondary Ions under FIB-shave-off Condition -Toward Development of Three-Dimensional Secondary Ion Image System-

• Habib Ahsan

  Institute of Industrial Science, The University of Tokyo

• Asakura Hiroyuki

  Institute of Industrial Science, The University of Tokyo

• Fukushima Miku

  Institute of Industrial Science, The University of Tokyo

• Kang So-Hee

  Institute of Industrial Science, The University of Tokyo

• Kim Yun

  Institute of Industrial Science, The University of Tokyo

• Tomiyasu Bunbunoshin

  Institute of Industrial Science, The University of Tokyo Environmental Science Center, The University of Tokyo

• Owari Masanori

  Institute of Industrial Science, The University of Tokyo Environmental Science Center, The University of Tokyo

抄録

In our previous studies, some approaches have been taken to get three-dimensional (3D) image for both inorganic and organic materials using FIB-ToF-SIMS technique. Of these, shave-off cross-sectioning and metal-assisted shave-off processes were predominant. In the present study, a further approach has been taken to get a 3D image through developing 3D shave-off cross-sectioning method for the generation of secondary ions. Currently used shave-off cross-sectioning method is able to provide 2D image on X-Z plane and that can be improved into 3D by using resistive anode detector through changing the optical transportation system of the secondary ions. Installation of cylindrical lens along Z-axis shows 1000 times magnification of the real image on the detector. For investigation of angular distribution of secondary ions, shape and/or angle of the shave-off cross-sectioning areas, using W-wires as model samples, was evaluated. Shave-off method exhibited the formation of a certain shape of the sample surface with 87° angle. The peak angle of the generated secondary ions was ~45° for 87° tilted samples (Si-wafer and Al-foil) and the observed secondary ion images were 2D by using a resistive anode detector. No significant change in angular distribution of the secondary ions was observed from highly roughness (Al-foil) and almost flat surfaces (Si-wafer).

収録刊行物

• Journal of Surface Analysis

  Journal of Surface Analysis 24 (2), 159-163, 2017

  一般社団法人　表面分析研究会

詳細情報

• CRID: 1390564237998209152
• NII論文ID: 130007405884
• NII書誌ID: AA11448771
• DOI: 10.1384/jsa.24.159
• ISSN: 13478400
• ISSN: 13411756
• NDL書誌ID: 028759669
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I028759669
• Web Site: https://www.jstage.jst.go.jp/article/jsa/24/2/24_159/_pdf
• 本文言語コード: en
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