Printing of Lenticular Lens Patterns Using Defocused Projection Lithography

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A new optical lithography method for fabricating humpbacked pattern arrays was developed. The patterns were printed by adopting intentionally defocused projection exposure under the condition of very low numerical aperture of 0.089. As a resist, approximately 100-μm thick SU-8 (MicroChem) was used, and appropriate defocuses were 1400-2000 μm. When the exposure time and the defocus were changed, curvature radii of lens patterns were controllable in a wide range of 70-300 μm. The curvature radius became large when the exposure time was extended, and the defocus was reduced. The patterns will be usable as original molds of lenticular lens arrays. In addition, the patterns will also be usable as temporal lenticular lens arrays as they are, because the SU-8 is almost transparent for visible light.

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