Excitation Wavelength Dependent Interfacial Charge Transfer Dynamics in a CH<sub>3</sub>NH<sub>3</sub>PbI<sub>3</sub> Perovskite Film
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- Liu Maning
- School of Engineering, RMIT University
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- Endo Masaru
- Institute for Chemical Research, Kyoto University
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- Shimazaki Ai
- Institute for Chemical Research, Kyoto University
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- Wakamiya Atsushi
- Institute for Chemical Research, Kyoto University
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- Tachibana Yasuhiro
- School of Engineering, RMIT University Office for University-Industry Collaboration, Osaka University
Bibliographic Information
- Other Title
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- Excitation Wavelength Dependent Interfacial Charge Transfer Dynamics in a CH₃NH₃PbI₃ Perovskite Film
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Abstract
Elucidation of interfacial charge separation and recombination mechanisms is crucial to improve performance of organic-inorganic metal halide perovskite solar cells. Here, we have investigated influence of initially populated electron and hole potential levels in a perovskite conduction band (CB) and valence band (VB), respectively, by altering an excitation wavelength on interfacial charge separation and recombination dynamics in a CH3NH3PbI3 perovskite film sandwiched by a mesoporous TiO2 structure as an electron transport material (ETM) and a spiro-OMeTAD film as a hole transport material (HTM). Multi-phasic electron injection reactions are observed over <1.2 to several tens of nanoseconds, while most of holes are injected to a spiro-OMeTAD layer within the transient emission spectroscopy instrument response time (1.2 ns). In contrast, interfacial charge recombination rates are slower (from 5 ms to 1.3 s) with the increase of the excitation wavelength. These kinetics suggest that as long as low excitation intensity is employed, e.g. 10 nJ/cm2 or 1 sun (100 mW/cm2), the APCE of ~100% can be expected at any excitation wavelength for the solar cells based on FTO/c-TiO2/m-TiO2/MAPbI3/OMeTAD films.
Journal
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- Journal of Photopolymer Science and Technology
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Journal of Photopolymer Science and Technology 31 (5), 633-642, 2018-06-25
The Society of Photopolymer Science and Technology(SPST)
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Details 詳細情報について
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- CRID
- 1390282763044852352
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- NII Article ID
- 130007481470
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- NII Book ID
- AA11576862
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- ISSN
- 13496336
- 09149244
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- NDL BIB ID
- 029061639
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- Text Lang
- en
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- Data Source
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- JaLC
- NDL
- Crossref
- CiNii Articles
- KAKEN
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- Abstract License Flag
- Disallowed