Novel Photoresist using Photodeprotectable N-Alkoxybenzyl Aromatic Polyamide
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- Iwashita Kenichi
- Photosensitive Material R&D Department, Hitachi Chemical Co. Ltd. Department of Materials and Life Chemistry, Kanagawa University
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- Suzuki Ryousuke
- Department of Materials and Life Chemistry, Kanagawa University
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- Katoh Hironobu
- Department of Materials and Life Chemistry, Kanagawa University
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- Ohta Yoshihiro
- Department of Materials and Life Chemistry, Kanagawa University
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- Yokozawa Tsutomu
- Department of Materials and Life Chemistry, Kanagawa University
書誌事項
- タイトル別名
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- Novel Photoresist using Photodeprotectable <i>N</i>-Alkoxybenzyl Aromatic Polyamide
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抄録
Photodeprotection of N-octyloxybenzyl aromatic polyamide film containing photo acid generator (PAG) was investigated. The photodeprotection was proceeded well under UV irradiation (5 J/cm2), followed by heating at 130 °C for 15 min in the presence of 25 wt% of PAG. Line pattern of 30 to 20 μm on Si wafer was obtained from the photosensitive film after dipping into acetone. It turned out that N-alkoxybenzyl aromatic polyamides serve as a new photosensitive material in the presence of PAG.
収録刊行物
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- Journal of Photopolymer Science and Technology
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Journal of Photopolymer Science and Technology 31 (4), 467-472, 2018-06-25
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詳細情報 詳細情報について
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- CRID
- 1390564238022577024
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- NII論文ID
- 130007481476
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- NII書誌ID
- AA11576862
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- ISSN
- 13496336
- 09149244
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- NDL書誌ID
- 029061799
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- 本文言語コード
- en
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- データソース種別
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- JaLC
- NDL
- Crossref
- CiNii Articles
- KAKEN
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- 抄録ライセンスフラグ
- 使用不可