Novel Photoresist using Photodeprotectable N-Alkoxybenzyl Aromatic Polyamide

  • Iwashita Kenichi
    Photosensitive Material R&D Department, Hitachi Chemical Co. Ltd. Department of Materials and Life Chemistry, Kanagawa University
  • Suzuki Ryousuke
    Department of Materials and Life Chemistry, Kanagawa University
  • Katoh Hironobu
    Department of Materials and Life Chemistry, Kanagawa University
  • Ohta Yoshihiro
    Department of Materials and Life Chemistry, Kanagawa University
  • Yokozawa Tsutomu
    Department of Materials and Life Chemistry, Kanagawa University

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タイトル別名
  • Novel Photoresist using Photodeprotectable <i>N</i>-Alkoxybenzyl Aromatic Polyamide

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Photodeprotection of N-octyloxybenzyl aromatic polyamide film containing photo acid generator (PAG) was investigated. The photodeprotection was proceeded well under UV irradiation (5 J/cm2), followed by heating at 130 °C for 15 min in the presence of 25 wt% of PAG. Line pattern of 30 to 20 μm on Si wafer was obtained from the photosensitive film after dipping into acetone. It turned out that N-alkoxybenzyl aromatic polyamides serve as a new photosensitive material in the presence of PAG.

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