Field-Effect Transistors Based on PbS Colloidal Nano-Dot Films Treated with Ammonium Sulfide Solution
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- TAKEICHI Yumi
- Faculty of Systems Engineering, Wakayama University
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- MITANI Nobuhiro
- Faculty of Systems Engineering, Wakayama University
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- UNO Kazuyuki
- Faculty of Systems Engineering, Wakayama University
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- TANAKA Ichiro
- Faculty of Systems Engineering, Wakayama University
Bibliographic Information
- Other Title
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- 硫化アンモニウム処理したPbSコロイダルナノドット薄膜を用いた電界効果トランジスタ
- リュウカ アンモニウム ショリ シタ PbS コロイダルナノドット ハクマク オ モチイタ デンカイ コウカ トランジスタ
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Abstract
<p>We fabricated field-effect transistors (FETs) using ammonium sulfide-treated PbS colloidal nano-dot (CND) films. After the ligand molecules were removed from the CNDs by the ammonium sulfide treatment, many cracks were observed in the atomic force microscope image of the PbS ND monolayer that was formed by horizontal lifting method. Those cracks were filled and almost disappeared after we repeated the formation of the PbS CND monolayer and removal of the ligand molecules for three times. The FETs fabricated with the cracked PbS ND films exhibited serious bias stress effect and very low hole mobility of 5.6×10-5 cm2V-1s-1, which were attributed to the carrier traps existing on the NDs surface. On the other hand, the carrier mobility of the FETs with the crack-free PbS ND films was improved to be 1.1×10-3 cm2V-1s-1 because the cracks were filled and the trap density was significantly reduced.</p>
Journal
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- Journal of the Society of Materials Science, Japan
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Journal of the Society of Materials Science, Japan 67 (9), 840-843, 2018-09-15
The Society of Materials Science, Japan
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Keywords
Details 詳細情報について
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- CRID
- 1390282763047995008
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- NII Article ID
- 130007485386
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- NII Book ID
- AN00096175
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- ISSN
- 18807488
- 05145163
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- NDL BIB ID
- 029265617
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- Text Lang
- ja
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- Data Source
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- JaLC
- NDL
- Crossref
- CiNii Articles
- KAKEN
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- Abstract License Flag
- Disallowed