赤外センサ用Mg<sub>2</sub>Si結晶の融液成長  [in Japanese] Melt growth of Mg<sub>2</sub>Si crystals for IR detectors  [in Japanese]

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Abstract

<p>  We have grown high purity n-type Mg<sub>2</sub>Si single crystals by the vertical Bridgman growth method using a pyrolitic graphite (PG) crucible and high purity Mg (5N or 6N-up) and Si (10N-grade) source metals. The saturated electron concentration and Hall mobility of the grown crystals were (1 - 2) × 10<sup>15</sup> cm<sup>-3</sup> and 480 - 485 cm<sup>2</sup>/Vs at room temperature. Mg<sub>2</sub>Si substrates prepared from the crystals had an enough crystalline quality to fabricate pn-junction photodiodes (PDs). The ring-electrode-type, pn-junction PD fabricated by the rapid thermal diffusion of Ag and conventional lift-off process showed a good photoresponse below 2 μm in wavelength. The detectivity <i>D</i><sup>*</sup> of 1 × 10<sup>12</sup> cmHz<sup>1/2</sup>/W has been achieved with the PDs under 1.31 μm laser diode (LD) bombardment at 77K.</p>

Journal

  • Journal of the Japanese Association for Crystal Growth

    Journal of the Japanese Association for Crystal Growth 45(3), n/a, 2018

    The Japanese Association for Crystal Growth

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