Fabrication of the Flexible Dual-Gate OFET Based Organic Pressure Sensor

• ISHIKAWA Tatsuya

  Japan Advanced Institute of Science and Technology

• SAKAI Heisuke

  Japan Advanced Institute of Science and Technology

• MURATA Hideyuki

  Japan Advanced Institute of Science and Technology

抄録

We have developed the flexible dual-gate OFET based pressure sensor using a thin polyethylene naphthalate (PEN, 25 µm) film as a substrate. The performance was equivalent to that fabricated on the glass substrate, and it could also be used on the curved surface. Drain current in the flexible pressure sensor was increased according to the pressure load without application of gate voltage. The magnitude of the change in drain current with respect to pressure application was about 2.5 times larger than that for the device on the glass substrate.

収録刊行物

• IEICE Transactions on Electronics

  IEICE Transactions on Electronics E102.C (2), 188-191, 2019-02-01

  一般社団法人 電子情報通信学会

キーワード

• flexible substrate
• pressure sensor
• organic field-effect transistor
• P(VDF/TrFE)
• dual-gate organic transistor

詳細情報

• CRID: 1390564238073085952
• NII論文ID: 130007586601
• DOI: 10.1587/transele.2018oms0013
• ISSN: 17451353
• ISSN: 09168524
• Web Site: https://www.jstage.jst.go.jp/article/transele/E102.C/2/E102.C_2018OMS0013/_pdf
• 本文言語コード: en
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