Control of Threshold Voltage and Low-Voltage Operation in Organic Field Effect Transistor

• ABE Yasuyuki

  Japan Advanced Institute of Science and Technology

• SAKAI Heisuke

  Japan Advanced Institute of Science and Technology

• DAO Toan Thanh

  University of Transport and Communications

• MURATA Hideyuki

  Japan Advanced Institute of Science and Technology

抄録

We report the control of threshold voltage (V_th) for low voltage (5V) operation in OFET by using double gate dielectric layers composed of poly (vinyl cinnamate) and SiO₂. We succeeded in realizing a driving voltage of -5V and V_th shift by c.a. 1.0V. And programmed V_th was almost unchanged for 10⁴s, where the relative change of V_th remains more than 99%.

収録刊行物

• IEICE Transactions on Electronics

  IEICE Transactions on Electronics E102.C (2), 184-187, 2019-02-01

  一般社団法人 電子情報通信学会

キーワード

• threshold voltage control
• low-voltage
• organic field effect transistor

詳細情報

• CRID: 1390564238072304128
• NII論文ID: 130007588055
• DOI: 10.1587/transele.2018oms0012
• ISSN: 17451353
• ISSN: 09168524
• Web Site: https://www.jstage.jst.go.jp/article/transele/E102.C/2/E102.C_2018OMS0012/_pdf
• 本文言語コード: en
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