The effect of the starting Si powder on the sinterability and thermo-mechanical properties of sintered reaction-bonded silicon nitride

• GO Shin-Il

  Materials Science and Engineering, Pusan National University Engineering Ceramics Research Group, Korea Institute of Materials Science

• KO Jae-Woong

  Engineering Ceramics Research Group, Korea Institute of Materials Science

• KIM Ha-Neul

  Engineering Ceramics Research Group, Korea Institute of Materials Science

• KWON Se-Hun

  Materials Science and Engineering, Pusan National University

• KIM Hai-Doo

  Engineering Ceramics Research Group, Korea Institute of Materials Science

• PARK Young-Jo

  Engineering Ceramics Research Group, Korea Institute of Materials Science

抄録

The effects of the size of Si powder on the thermal conductivity and strength of sintered reaction-bonded silicon nitride (SRBSN) were investigated. Si powders with various sizes were prepared by controlling the high-energy milling duration of the starting Si powder, where the median Si size varied from 3.97 to 0.62 µm, corresponding to an oxygen content of 0.54 to 2.57 wt %. The thermal conductivity increased gradually up to the 4 h milling (D₅₀ = 1.10 µm or 1.60 wt % oxygen) owing to a gain in the relative density, but decreased by 25% for the 12 h milling (D₅₀ = 0.62 µm or 2.57 wt % oxygen). On the other hand, the flexural strength showed almost no change until the 4 h milling, but increased by 20% for 12 h milling. This opposite tendency was elucidated by the difference in grain size distribution and thickness of intergranular grain boundary phase (IGP); Clear bimodal size distribution of grains contributed to high strength, and the nearly doubled thickness of IGP was observed for SRBSN from the finest Si powder (D₅₀ = 0.62 µm or 2.57 wt % oxygen). In order to meet the required thermal properties for the substrate usages by sintering at 1900°C, the size of silicon powder of D₅₀ = 1.10 µm (1.60 wt % oxygen) is allowed for 6 h sintering, but that of D₅₀ = 0.62 µm (2.57 wt % oxygen) needs prolonged sintering time over 6 h (12 h in the current experiment) to reach required grain growth.

収録刊行物

• Journal of the Ceramic Society of Japan

  Journal of the Ceramic Society of Japan 127 (3), 136-142, 2019-03-01

  公益社団法人 日本セラミックス協会

キーワード

• Silicon nitride
• Reaction bonded
• Gas pressure sintering
• Thermal conductivity
• Flexural strength

詳細情報

• CRID: 1390282763101929344
• NII論文ID: 130007606919
• DOI: 10.2109/jcersj2.18074
• ISSN: 13486535
• ISSN: 18820743
• Web Site: https://www.jstage.jst.go.jp/article/jcersj2/127/3/127_18074/_pdf
• 本文言語コード: en
• データソース種別:
  • JaLC
  • Crossref
  • CiNii Articles
• 抄録ライセンスフラグ: 使用不可