FORMING OF TIN NANOPARTICLES ON THE SURFACE OF HYDROGENATED SILICON THIN FILMS
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- Stuchlikova The Ha
- Institute of Physics of the Czech Academy of Sciences, Czech Republic
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- Remes Zdenek
- Institute of Physics of the Czech Academy of Sciences, Czech Republic
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- Fajgar Radek
- Institute of Chemical Process Fundamentals of the Czech Academy of Sciences, Czech Republic
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- Kupcik Jaroslav
- Institute of Chemical Process Fundamentals of the Czech Academy of Sciences, Czech Republic
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- Micova Julia
- Institute of Chemistry, Slovak Academy of Sciences, Slovakia
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- Im Chan
- Dept. of Chemistry, Konkuk University, Korea
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- Stuchlik Jiri
- Institute of Physics of the Czech Academy of Sciences, Czech Republic
抄録
The plasma enhanced chemical vapor deposition (PECVD) was combined with in situ deposition of Sn thin film by evaporation technique at surface temperature about 220°C to form tin nanoparticles (Sn NPs) on the surface of hydrogenated silicon thin films. Formation of Sn NPs was additionally stimulated by hydrogen plasma treatment through a low pressure hydrogen glow discharge. Both processes were applied in situ to avoid oxidation and were repeatedly alternated to realize deposition of silicon thin films with embedded Sn NPs. Characterization of the prepared structures was performed by scanning electron microscopy (SEM), high resolution transmission electron microscope (HRTEM), electron diffraction spectroscopy (EDS) and X-ray photoelectron spectroscopy (XPS). The photothermal deflection spectroscopy (PSD) was used for optical measurement of the absorption coefficient spectra that is higher than in the case of thin films without NPs. PIN diode structures with and without the embedded Sn NPs were characterized of I-V characteristics.
収録刊行物
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- グランド再生可能エネルギー国際会議論文集
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グランド再生可能エネルギー国際会議論文集 1 (0), 58-, 2018
特定非営利活動法人 再生可能エネルギー協議会
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詳細情報 詳細情報について
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- CRID
- 1390564238116939520
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- NII論文ID
- 130007609599
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- ISSN
- 24340871
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- 本文言語コード
- en
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- データソース種別
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- JaLC
- CiNii Articles
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- 抄録ライセンスフラグ
- 使用不可